This paper reports on an improved analytic model forpredicting micro-contact resistance needed for designing microelectro-mechanical systems (MEMS) switches. The originalmodel had two primary considerations: 1) contact materialdeformation (i.e. elastic, plastic, or elastic-plastic) and 2) effectivecontact area radius. The model also assumed that individual aspotswere close together and that their interactions weredependent on each other which led to using the single effective aspotcontact area model. This single effective area model wasused to determine specific electron transport regions (i.e. ballistic,quasi-ballistic, or diffusive) by comparing the effective radius andthe mean free path of an electron. Using this model required thatmicro-switch contact materials be deposited, during devicefabrication, with processes ensuring low surface roughness values(i.e. sputtered films). Sputtered thin film electric contacts,however, do not behave like bulk materials and the effects of thinfilm contacts and spreading resistance must be considered. Theimproved micro-contact resistance model accounts for the twoprimary considerations above, as well as, using thin film,sputtered, electric contacts
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